Product no 993962225
Model MZ-V7S250E
Brand
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EAN 0887276330525
Weight 0.08 kg
Produktbeskrivelse | Samsung 970 EVO Plus MZ-V7S250 - SSD - 250 GB - PCIe 3.0 x4 (NVMe) |
Type | Solid state-drev - intern |
Kapacitet | 250 GB |
Hardware kryptering | Ja |
Krypterings algoritme | 256-bit AES |
NAND Flashhukommelses-type | Tredobbelt-niveau celle (TLC) |
Model | M.2 2280 |
Grænseflade | PCIe 3.0 x4 (NVMe) |
Buffer størrelse | 512 MB |
Egenskaber | TRIM support, stand-by modus, Auto Garbage Collection Algorithm, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T. |
Dimensioner (B x D x H) | 22.15 mm x 80.15 mm x 2.38 mm |
Vægt | 8 g |
Producentgaranti | 5 års garanti |
General | |
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Buffer Size | 512 MB |
Capacity | 250 GB |
Depth | 80.15 mm |
Device Type | Solid state drive - internal |
Encryption Algorithm | 256-bit AES |
Features | TRIM support, sleep mode, Auto Garbage Collection Algorithm, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T. |
Form Factor | M.2 2280 |
Hardware Encryption | Yes |
Height | 2.38 mm |
Interface | PCIe 3.0 x4 (NVMe) |
NAND Flash Memory Type | Triple-level cell (TLC) |
Weight | 8 g |
Width | 22.15 mm |
Performance | |
4KB Random Read | 17000 IOPS |
4KB Random Write | 60000 IOPS |
Internal Data Rate | 3500 MBps (read) / 2300 MBps (write) |
Maximum 4KB Random Read | 250000 IOPS |
Maximum 4KB Random Write | 550000 IOPS |
SSD Endurance | 150 TB |
Reliability | |
MTBF | 1,500,000 hours |
Expansion & Connectivity | |
Compatible Bay | M.2 2280 |
Interfaces | PCI Express 3.0 x4 (NVMe) - M.2 Card |
Power | |
Power Consumption | 5 Watt (average) | 9 Watt (maximum) | 30 mW (idle max) | 5 mW (sleep) |
Software & System Requirements | |
Software Included | Samsung Magician Software |
Miscellaneous | |
Compliant Standards | IEEE 1667 |
Manufacturer Warranty | |
Service & Support | Limited warranty - 5 years |
Environmental Parameters | |
Max Operating Temperature | 70 °C |
Min Operating Temperature | 0 °C |
Shock Tolerance (operating) | 1500 g @ 0.5 ms half-sine |